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IRLB4132 N-Channel Power MOSFET – 30 V, Up to 78 A
IRLB4132 N-Channel Power MOSFET – 30 V, Up to 78 A
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IRLB4132 N-Channel Power MOSFET – 30 V, Up to 78 A

₹30.0 Prices include applicable taxes.
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The IRLB4132 is a high-performance N-channel power MOSFET well-suited for power control tasks like UPS, inverter systems, and low-voltage power tools. It delivers exceptional efficiency due to ultra-low on-resistance and robust drive characteristics, making it ideal for high-current applications.

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Product Specifications

Specification Details
Drain-to-Source Voltage (V<sub>DSS</sub>) 30 V
Continuous Drain Current (I<sub>D</sub>) 78 A (at case temp)
Pulse Drain Current (I<sub>DM</sub>) Up to 150 A
Maximum Power Dissipation (P<sub>D</sub>) 140 W (at case)
On-State Resistance (R<sub>DS(on)</sub>) ≤ 3.5 mΩ @ V<sub>GS</sub>=10 V; ≤ 4.5 mΩ @ V<sub>GS</sub>=4.5 V
Gate-Threshold Voltage (V<sub>GS(th)</sub>) 1.35 V (min) to 2.35 V (max)
Total Gate Charge (Q<sub>g</sub>) ~36 nC
Max. Gate-to-Source Voltage (V<sub>GS</sub>) ±20 V

Frequently Asked Questions

Yes.

IRLB4132 offers lower R<sub>DS(on)</sub>, higher current handling, and better thermal efficiency, especially in modern 4.5–10 V gate drive systems.

Yes — for high-power or continuous operation, mounting a heatsink is necessary due to its high power dissipation (140 W).

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