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*Product images are for illustrative purposes only. Actual product may differ from images. Please refer to the product description and specifications for details.
IRLB8314 N-Channel Power MOSFET – 30 V, Ultra Low Rₒₙ (TO-220AB)
₹35.0
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The IRLB8314 is a high-efficiency N-channel power MOSFET with ultra-low on-resistance and exceptional current handling capabilities. Optimized for applications requiring fast switching and minimal power loss, it's ideal for high-current power supplies, motor drivers, and DC-DC converter designs.
Utilizing Infineon’s advanced Trench FET architecture, this MOSFET delivers low conduction losses and outstanding thermal performance.
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Product Specifications
| Specification | Details |
|---|---|
| Drain-Source Voltage (Vₙₙₘₓ) | 30 V |
| Continuous Drain Current (Iₙ) | 171 A (at case temp) |
| On-Resistance (Rₙₒₙ) | ≈ 2.4 mΩ @ V<sub>GS</sub>=10 V (≈ 2.2 mΩ @ 4.5 V) |
| Gate-Threshold Voltage (V<sub>GS(th)</sub>) | ~1.7–2.2 V |
| Gate Charge (Qₙ₉) | ~60 nC (at V<sub>GS</sub>=4.5 V) |
| Gate-Source Voltage (Max) | ±20 V |
| Power Dissipation (Pₙₙₓ) | 125 W (case temperature) |
| Input Capacitance (Cₙₛₛ) | 5050 pF (at V<sub>DS</sub>=15 V) |
Frequently Asked Questions
With significantly lower Rₒₙ and faster switching, IRLB8314 is more efficient, especially in modern low-voltage, high-current applications.
Yes—while operation begins near 4.5V gate drive, 10V provides best performance.
Absolutely. At currents >50A, a suitable heatsink is essential to manage thermal dissipation.
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